AC Variability and Endurance Measurement Technique for Resistive Switching Memories

Variability in resistive switching memory (RRAM) devices is studied by applying an AC measurement setup capable of efficiently collecting read current data in low and high resistance states (LRS and HRS, respectively) in each consecutive pulse SET/RESET cycle. It is found that HRS and LRS read current values follow the lognormal and normal distributions, respectively. Endurance test demonstrates that, in a small percentage of cycles, the set operation may fail, which might be missed when a conventional approach of a limited number of read operations is employed.