Manufacturing and reliability of chip-scale packaged FBAR oscillators

Ultrasonics Symposium(2014)

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Abstract
We present a robust, chip-scale packaged FBAR oscillator that is compatible with high volume manufacturing. The oscillator's extremely small size (area <; 1 mm2, thickness = 0.23 mm) combined with an SMT-compatible pad design enables integration of the timing function in-package with a companion ASIC. We have measured tens of thousands of oscillators operating at a native frequency of 2.6 GHz and observe mean jitter less than 10 fsec (12 kHz to 20 MHz offset), with many devices better than 8 fsec. The mean phase noise is -158 dBc/Hz at 800 kHz offset and -118 dBc/Hz at 10 kHz offset. The device draws 18 mA at 3.3V, and the phase noise at all frequency offsets remains within 1 dB over the temperature range from -40 to 125°C. Far from carrier noise is set by the power delivered to the resonator. Due to the ability of the resonator to remain linear at high power, far-from-carrier phase noise is as low as -165 dBc/Hz. The sensitivity to acceleration of these oscillators is better than 0.1 ppb/g. Hermeticity tests carried out on the chip-scale package indicate that the oscillators behave with the same level of integrity as our standard FBAR filters. Preliminary studies on aging have determined an upper bound on frequency drift. Including contributions from supply and load sensitivity, temperature, and aging, total frequency drift is less than +/-200 ppm.
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Key words
acoustic noise,acoustic resonator filters,application specific integrated circuits,bulk acoustic wave devices,chip scale packaging,phase noise,thin film devices,asic,smt-compatible pad design,chip-scale packaged fbar oscillator reliability,far-from-carrier phase noise,frequency 10 khz,frequency 2.6 ghz,frequency 800 khz,hermeticity tests,standard fbar filters,temperature -40 degc to 125 degc,voltage 3.3 v,baw,fbar,zdr,chip-scale packaged oscillator,frequency reference,high q resonator,zero drift resonator,jitter,resonant frequency
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