TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology

Florence Malou,Gilles Gasiot,Remy Chevallier,Laurent Dugoujon,Philippe Roche

Radiation Effects Data Workshop（2014）

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摘要

We present Single Event Effects characterization and Total Ionizing Dose behavior up to 300 krad(Si) on Rad-Hardened 1.2GHz PLL IP and cold-spare I/O from new ST CMOS 65nm space technology.

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关键词

cmos analogue integrated circuits,uhf integrated circuits,industrial property,phase locked loops,radiation hardening (electronics),see characterization,st cmos space technology,tid characterization,cold-spare i-o,frequency 1.2 ghz,intellectual property,phase-locked loop,rad-hardened pll ip,cmos integrated circuits,phase locked loop,cmos technology,protons,temperature measurement

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