Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory

Mustafa Ozen,Mustafa Acar,Mark P Van Der Heijden,Melina Apostolidou,D M W Leenaerts,Rik Jos,Christian Fager

Tampa, FL（2014）

引用 8|浏览3

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摘要

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.

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关键词

bicmos analogue integrated circuits,ge-si alloys,uhf power amplifiers,semiconductor materials,wideband amplifiers,bicmos class-e smpa,collector efficiency,continuous class-e mode theory,frequency 1.3 ghz to 2.2 ghz,generic wideband smpa design approach,wideband watt-level silicon-germanium bicmos switching mode power amplifier,cmos,sige,class-e,efficiency,wideband,cmos integrated circuits,impedance,power generation,harmonic analysis,switches

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