Development of Si photonics technology: Ge/Si avalanche photodiode for PON applications

Mengyuan Huang,Pengfei Cai,Liangbo Wang,Tuo Shi,Wang Chen,Su Li,Guanghui Hou,Chingyin Hong,Dong Pan

Optical Fiber Communications Conference and Exhibition（2014）

引用 9|浏览5

暂无评分

摘要

We accomplished the first mass-production of Ge/Si avalanche photodiode (APD) for FTTx applications in a standard CMOS foundry. Our APDs satisfy sensitivity requirements of 10G PON (both OLT and ONU sides) applications within -5°C~75°C.

查看译文

关键词

cmos integrated circuits,avalanche photodiodes,elemental semiconductors,germanium,integrated optoelectronics,passive optical networks,silicon,fttx applications,ge-si,olt sides,onu sides,pon applications,si photonics technology,avalanche photodiode,sensitivity,standard cmos foundry

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要