Technologies and challenges of fine-pitch backside via-last 3DIC TSV process integration and its electrical characteristics and system applications
VLSI Technology, Systems and Application（2014）
摘要
Technologies of fine-pitch backside via last 3DIC through silicon via (TSV) process are developed to be applied to the mass production of 3D IC products. The detailed process development key points and challenges are disclosed. The electrical data are also analyzed to check the TSV process. Also, its application in real 3DIC system is demonstrated to show the benefits of system form factor and frame rate.
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关键词
fine-pitch technology,integrated circuit packaging,three-dimensional integrated circuits,3d ic products,3d ic system,3dic through silicon via process,tsv,electrical characteristics,electrical data analysis,fine-pitch backside technology,frame rate,mass production,system form factor,metals,etching,silicon
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