Temperature-dependent studies of the electrical properties and the conduction mechanism of HfOx-based RRAM
VLSI Technology, Systems and Application（2014）
摘要
The conduction mechanism of HfOx-based RRAM is investigated by analyzing the I-V characteristics of HfOx-based RRAM devices at different temperatures ranging from 350 K down to 40 K. Electrical conduction of RRAM is found to be strongly dependent on the resistance state of the device, electric field, and temperature. At relatively high electric field (E > 3 MV/cm), Poole-Frenkel conduction explains our measured temperature dependence at limited temperature (T > 200 K) and bias ranges while trap-assisted tunneling accounts for the temperature-insensitive conduction regime (T <; 100 K). It is also concluded that the more resistive RRAM device shows weaker dependence on temperature.
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关键词
poole-frenkel effect,electric fields,hafnium compounds,high-k dielectric thin films,random-access storage,tunnelling,hfo,i-v characteristic analysis,poole-frenkel conduction mechanism,rram devices,electric field,electrical properties,high electric field,resistance state,resistive random access memory,temperature 350 k to 40 k,temperature-dependent study,temperature-insensitive conduction regime,trap-assisted tunneling,poole frenkel effect,tunneling,resistance,mathematical model
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