InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 band k→·p→ theory
Solid-state Electronics(2015)
摘要
8 band k→·p→ method is used to calculate subband structures of InGaAs inversion layers accounting for strong coupling between conduction and valence bands around Γ point as well as quantum confinement. Inversion layer mobility is computed employing Kubo–Greenwood formalism. Scatterings due to acoustic phonons, polar optical phonons, ionized impurities, interface fixed charges, surface roughness, and alloy disorder are included. The simulated low-field electron mobility results are in good agreement with experimental data with and without an InP capping layer.
更多查看译文
关键词
InGaAs,nMOS,Quantum confinement,Inversion layer mobility calculation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要