Total-ionizing-dose effects and reliability of carbon nanotube FET devices.

•Relative stability is observed during constant-voltage stress for carbon nanotube field effect transistors.•We report irradiation/post-rad annealing under positive gate bias induces more degradation.•The degradation after 10-keV X-ray irradiation depends on bias.•Cycling of the on/off state leads to significant degradation in the memory window.