Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon
Selected Topics in Quantum Electronics, IEEE Journal of (2015)
摘要
We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 hours of constant current stress at 30oC, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism.
更多查看译文
关键词
quantum dot lasers,semiconductor device reliability,semiconductor lasers,transmission electron microscopy,gallium arsenide,reliability,silicon,aging
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要