Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory
Electron Device Letters, IEEE (2015)
摘要
Resistive random access memory (RRAM) is a promising emerging nonvolatile memory which offer high density integration in the form of cross-bar array design. Selector devices are a vital requirement to suppress the cross-talk issue. In this letter, we are going to demonstrate the coexistence of resistive switching (RS) and threshold switching (TS) in an ultrathin 2-nm Aluminium oxide (AlOx)-based crossbar RRAM devices. Depending on current level the device itself can switch from TS to RS mode with a nonlinearity of > 102. Stable TS of > 103 cycles has been achieved at 10 nA. Achievements of this letter offers the usability of 2-nm AlOx RRAM devices as a selector and as a memory device for high density crossbar array integration.
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关键词
aluminium compounds,atomic layer deposition,resistive ram,switching circuits,alox,rram device,rs,ts,atomic layer deposited ultrathin aluminium oxide crossbar array design,cross-talk suppression,current 10 na,nonvolatile memory,resistive random access memory,resistive switching,size 2 nm,threshold switching,rram,cross-bar,current compliance,resistance,tunneling,switches,tin
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