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Effect of Cavity Lifetime Variation on the Static and Dynamic Properties of 1.3-μm Wafer-Fused VCSELs

Selected Topics in Quantum Electronics, IEEE Journal of  (2015)

Cited 16|Views186
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Abstract
We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-μm wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs). The photon lifetime is modified by decreasing the top mirror reflectivity either by shallow-surface etching or by Bragg-reflector layer-pair removal. Significant improvements in both static and dynamic VCSEL performance as well as the extraction of internal VCSEL device parameters are achieved.
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Key words
distributed bragg reflector lasers,etching,laser cavity resonators,laser mirrors,quantum well lasers,reflectivity,surface emitting lasers,bragg-reflector layer-pair removal,dynamic properties,high-speed 1.3-μm wavelength wafer-fused vertical-cavity surface-emitting lasers,internal vcsel device parameters,mirror reflectivity,photon cavity lifetime variation,shallow-surface etching,static properties,wafer-fused vcsel,wavelength 1.3 mum,damping,vcsel,high speed,modulation,photon lifetime,vertical-cavity surface-emitting lasers (vcsel),photonics,gallium arsenide
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