On the Optimal On/Off Resistance Ratio for Resistive Switching Element in one-selector one-resistor (1S1R) Crosspoint Arrays

Electron Device Letters, IEEE  (2015)

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摘要
This work investigates the impact of resistive switching element (RSE) parameters on the read performance of a two-terminal one-selector one-resistor (1S1R) cell. SPICE array simulation results show that reducing RLRS improves the read margin (RM) but trades off with power consumption (PR). While increasing RHRS improves the RM, too large a value leads to RM degradation when RHRS exceeds an optimal value. Therefore, choosing RHRS/RLRS ratio optimally is needed to maximize RM while balancing PR. A highly non-linear selector increases optimal the RHRS/RLRS ratio. However, further increasing the RSE towards higher optimal RHRS/RLRS ratio has only limited impact on the RM.
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关键词
1S1R,RRAM,Selector,crossbar array,on/off resistance ratio,read margin
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