The Effect of Tensile Strain on Optical Anisotropy and Exciton of -Plane ZnO

Wang, H.H.,Jr Sheng Tian,Chen, C.Y.,Huang, H.H.,Y C Yeh, P Y Deng,Liwei Chang,Y H Chu,Y R Wu,J H He

Photonics Journal, IEEE （2015）

Cited 4|Views6

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Abstract

The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112̅0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.

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Key words

II-VI semiconductors,light polarisation,optical films,optical materials,piezo-optical effects,thermo-optical effects,wide band gap semiconductors,zinc compounds,LaAlO3,ZnO-LaAlO3,exciton,m-plane ZnO film,near band edge emission,optical anisotropy,polarization degree,temperature dependency,tensile strain,II-VI semiconductor materials,Optical films,optical polarization,photoluminescence,strain

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