Experiment and Simulation of the Nonlinear and Transient Responses of GaAs PHEMT Injected With Microwave Pulses
Electromagnetic Compatibility, IEEE Transactions (2015)
Abstract
The nonlinear and transient responses of gallium arsenide pseudomorphic high electron mobility transistor (GaAs PHEMT) injected with microwave pulses are studied in this paper. The experimental research results show that the feature of the output power of the GaAs PHEMT is from linear increase to saturation to linear increase again as the input power increases; and the feature of the measured output time domain waveforms is from linearity to saturation to reversion as the input power increases. The simulation model for analyzing the GaAs PHEMT with microwave pulses is established by TCAD. The nonlinear feature of GaAs PHEMT analyzed through simulation is consistent with measurement. In addition, the field, current density, and temperature distribution inside the transistor injected with microwave pulses are discussed.
MoreTranslated text
Key words
gaas phemt,injection experiment,microwave pulse,nonlinear and transient,temperature inside transistor.,logic gates,gallium arsenide
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined