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Modified Interface State Charge Model for 4H-SiC Power MOSFETs

Hisamoto, D.,Yoshimoto, H.,Tega, N.

Electron Device Letters, IEEE  （2015）

Cited 5|Views2
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Abstract
We propose a modified model for interface-state charges to comprehend the device characteristics of 4H-SiC MOSFETs. Device characteristics, such as channel current and channel capacitance, and their dependence on temperature were intuitionally expected by regarding interface-state charges at the conduction band edge as stagnation. We also found that the observed mobility was underestimated through conventional experimental methods compared with actual channel mobility due to stagnant carriers.
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Key words
4h-sic,silicon carbide,interface state,power mosfets,capacitance,logic gates,power mosfet,semiconductor device modeling
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