Research on material removal rate of CMP 6H-SiC crystal substrate (0001) Si surface based on abrasive alumina (Al 2O 3)

SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational speed of the polishing platen and the workpiece and the polishing pressure, on the material removal rate (MRR) of SiC crystal substrate (0001) Si surface have been studied based on the alumina abrasive in chemical mechanical polishing (CMP). The results proposed by our research here will provide the reference for developing the slurry, optimizing the process parameters and investigating the material removal mechanism in CMP of SiC crystal substrate.