A phase change memory device fabrication technology using Si 2Sb2Te6 for low power consumption application

The Phase Change Memory (PCM) based on the rapid reversible phase change effect in the chalcogenide film has been regarded as one of the most promising candidates for the next-generation nonvolatile memories. The phase change material of Si2Sb2Te6 was newly proposed for PCM application, which has lower power consumption and better endurance than conventional Ge2Sb2Te5 materials. In this article, for the first time, the process technology for the phase change memory cell and array fabricated using SST as phase change material replacing conventional GST is presented. By adopting SST/GST PVD process and confined structure, on a small-scale phase change memory array with CMOS access transistors and addressing circuit, we are able to fabricate and demonstrate its full function with low power. The cell electrical testing results are compared between two kinds of films. We also proved a different phase transition mechanism with SST material.