Digital predistorted inverse class-F GaN PA with novel PAPR reduction technique

Microwave Symposium Digest(2011)

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摘要
Summary form only given, as follows. In this paper, a digital predistorted inverse class-F GaN power amplifier with novel PAPR reduction technique is presented, in which not only peaks but also valleys of signal are clipped to reduce the PAPR as much as possible. The inverse class-F PA is implemented with Cree's CGH40010 GaN HEMT which delivers output power of 10 W. For a 20 MHz wideband OFDM signal, adjacent channel power ratio (ACPR) of the proposed PA decreases from −35.4 dBc to −51.9 dBc, and drain efficiency of the PA is 31.3% at an average output power of 33.6 dBm.
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关键词
cree cgh40010 hemt,bandwidth 20 mhz,power 10 w,orthogonal frequency-division multiplexing,gan,digital predistorted inverse class-f power amplifier,ofdm modulation,power amplifiers,power amplifier,gallium compounds,high electron mobility transistors,ofdm,papr reduction technique,peak-to-average power ratio,wideband ofdm signal,inverse class-f,efficiency 31.1 percent,digital predistortion,linearity,power generation,orthogonal frequency division multiplexing
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