The Effects Of Substrate Temperature On The Properties Of Diphasic Nanocrystalline Silicon Thin Films

A series of diphasic nanocrystalline silicon thin films was prepared by PECVD technique. The effects of substrate temperature on the properties of the films were investigated. The results show that crystalline volume fraction and grain size in the films increase with increasing T-s. The improved structures lead to higher mobility lifetime product and better stability. While the photosensitivity decreases due to the formation of a conductive percolation channel or the shift of Femi-level in the diphasic films. In our case, the diphasic nanocrystalline silicon thin film deposited at 200 degrees C can gain both the fine photoelectrical properties and high stability.