3D modeling and electrical characteristics of through-silicon-via (TSV) in 3D integrated circuits

Lei Liang,Min Miao,Zhensong Li,Shufang Xu,Yuexia Zhang,Xiaoqing Zhang

Electronic Packaging Technology and High Density Packaging（2011）

引用 9|浏览10

暂无评分

摘要

Probably the most widely known more-than-Moore solutions is 3D chip stacking using TSV. The authors of this paper propose an equivalent circuit model of TSV and extract the values of passive elements within the model from full-wave scattering parameters simulation. Then, in order to estimate the signal distortion, the eye-diagram and TDR simulation are made and demonstrated. Additionally, transmission performance and the crosstalk of differential TSV with redistribution layer (RDL) are explored. The design rules for optimized crosstalk performance for TSVs with RDL are put forward.

查看译文

关键词

tdr simulation,s-parameters,integrated circuit modelling,3d chip stacking,redistribution layer,tsv equivalent circuit model,differential tsv crosstalk,three-dimensional integrated circuits,through-silicon-via,signal distortion,3d integrated circuits,3d modeling,crosstalk,equivalent circuits,full-wave scattering parameters simulation,eye-diagram,integrated circuit design,integrated circuit packaging,passive elements,electrical characteristics,s parameters,silicon,solid modeling

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要