1200 V normally-on 4H-SiC VJFET

A vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxy with trenched and implanted method. Its blocking voltage is up to 1200 V at gate bias VG=-10 V and drain current density is 395 A/cm2 at VG=2.5 V and VD=2 V, with related specific on-resistance 5.06 mΩ·cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance. The specific on-resistance can be further reduced by improving ohmic contact.