2700 V 4H-SiC JBS

WeiJiang Ni,Yuzhu Li,Zheyang Li,Yun Li,Wen Wang,Lingling Jia,Song Bai,Chen Chen

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics（2011）

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摘要

The junction barrier schottky diodes (JBS) are fabricated on a 76.2 mm 4H-SiC wafer based on in-hourse epitaxy and device technology. At room temperature, the diodes have a blocking voltage up to 2700 V. Threshold voltage is 0.8 V, and current density is 122 A/cm2 at VF=2 V with specific on resistance down to 8.8 mΩ·cm2. The schottky contact barrier (qΦB) of 1.24 eV and the ideality factor (n) of 1 are obtained.

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关键词

4H-SiC,High blocking voltage,Junction barrier schottky diodes

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