Near-room-temperature mid-infrared quantum well photodetector.

Sean Hinds,Margaret Buchanan,Richard Dudek,Sofiane Haffouz,Sylvain Laframboise,Zbigniew Wasilewski,H C Liu

ADVANCED MATERIALS（2011）

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摘要

We demonstrate InGaAs mid-infrared quantum well infrared photodetectors (MIR PV-QWIPs) that enable cost-effective mature GaAs-based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polarization sensitivity, radiation hardness, high detectivity, and high speed operation at TEC temperatures without bias.

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关键词

photovoltaic infrared imaging,intersubband quantum wells,gas sensing,micro-optoelectronics,photodetector noise

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