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活性成分对金刚石膜沉积速率和质量的影响

Jingangshi yu Moliao Moju Gongcheng/Diamond and Abrasives Engineering(2011)

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Abstract
采用微波等离子体化学气相法合成的金刚石膜质量好,但采用常规CH4-H2气体体系,金刚石膜的沉积速率低.为此,实验研究了C2 H5OH-H2、CH4-H2-Ar和CH4-H2-N2等含有活性成分的体系下,微波功率、碳源浓度、气体压力对金刚石膜沉积速率、表面形貌、电阻率的影响.结果表明:使用含氧、氩、氮等活性成分的体系,金刚石膜生长速率分别达0.57、0.59、0.58 μm/h,较常规CH4-H2体系提高了近一倍;并且金刚石膜的纯度高(薄膜表层金刚石C含量80%以上)、晶型好、电阻率高(约为1010 Ω·cm);同时,氩、氮的加入可显著降低金刚石的晶粒尺寸.因此,引入活性成分是一种提高金刚石膜沉积速率和质量的有效方法.
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Key words
Deposition rate,Diamond film,Microwave plasma chemical vapor deposition
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