H-plasma enhanced aluminum induced crystallization of poly-Si

The process of crystallization and passivation of poly-Si from a-Si was completed at the same time by aluminum induced crystallized in hydrogen plasma as called HAIC. It can shorten the crystallization time by 3/5 than that by normal in vacuum (AIC) in our condition. The residual quantity of Al in poly-Si by HAIC can be decreased to near half order of magnitude than that one crystallized by normal AIC. The Hall mobility was increase by near double. The enhancement mechanism was analyzed in the paper.