1.3µm InAs quantum dots grown on silicon substrate
RCSLPLT) and 2010 Academic Symposium Optoelectronics Technology（2010）
Abstract
The self-assembled InAs quantum dots (QDs) on Si substrate with high density (7.5×1010 cm-2) were achieved using relatively lower growth temperature by low-pressure metal-organic chemical vapor deposition. The PL spectra exhibit 1.3μm emission from InAs quantum dots at room temperature. PL measurements at 77K, Full Width at Half-Maximum (FWHM) is about 60meV.
MoreTranslated text
Key words
III-V semiconductors,MOCVD,indium compounds,photoluminescence,self-assembly,semiconductor growth,semiconductor quantum dots,FWHM,InAs,PL measurements,PL spectra,Si,full width at half-maximum,low-pressure metal-organic chemical vapor deposition,relatively lower growth temperature,self-assembled InAs quantum dots,silicon substrate,temperature 293 K to 298 K,temperature 77 K,wavelength 1.3 mum,1.3µm wavelength,InAs quantum dots,silicon substrate,
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined