Chemical Bath Deception In2S3 Buffer Layer of CuInS2 Film Solar Cells
E-Product E-Service and E-Entertainment(2010)
Abstract
Indium chloride (InCl3 · 4H2O), thioacetamide (CH3CSNH2) mixed solution for the precursor solution, adding an appropriate amount of citric acid for complexing agent, uniform films In2S3 was prepared by chemical bath deposition method on glass substrate surface. And X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible light photometer was used for the analysis and characterization of thin films. The acidity of solution, reaction temperature, deposition time and the addition of citric acid complexing agents and other factors on the impact of thin film deposition In2S3 thin film were studied. The results showed that: The deposition conditions for the film were in the pH value of 2, deposition time of 10h, deposition temperature of 80 . Under these conditions the films were obtained from the reaction system with well crystallinity, crystal structure of cubic structure, and different thin films band gap of about 2.5eV.
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Key words
photometers,coating techniques,precursor solution,indium compounds,deposition temperature,cuins2 film solar cells,buffer layers,deposition conditions,indium chloride,reaction temperature,ultraviolet detectors,uv-visible light photometer,x-ray diffraction,citric acid,chemical bath deception,solar cells,band gap,thin films,thioacetamide,scanning electron microscopy,in2s3 thin film,chemical engineering,buffer layer,thin film deposition,chemicals,x ray diffraction,crystal structure,thin film,solids,visible light
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