P-60: The performance enhancement of the 2ωYAG laser-crystallized poly-Si using a back-side self-heating layer of a-Si

Crystallization of a-Si by doubled frequency YAG laser using a self-heating layer technology was proposed in this paper. The grain size and the hall mobility of the resulted poly-Si thin film were enhanced up to almost two times by using the self-heating layer technology. This technology has a dual heating effect: heat-retaining and self-heating with an easier process and wider process window, compared to the conventional capping-layer technology. © 2010 SID.