Bipolar Resistive Switching Performance Of The Nonvolatile Memory Cells Based On (Agi)(0.2)(Ag2moo4)(0.8) Solid Electrolyte Films
JOURNAL OF APPLIED PHYSICS(2009)
Abstract
Resistive switching memory cells with polycrystalline (AgI)(0.2)(Ag2MoO4)(0.8) (AIMO) solid electrolyte films as storage medium were fabricated on SiO2/Pt/Ti/Si substrates by using pulse laser deposition technique and focused ion beam lithography. X-ray diffraction, scanning electron microscopy, and energy dispersive x-ray analysis have been employed to investigate the structure, the surface morphology, and the composition of AIMO thin films. The Ag/AIMO/Pt memory cells with sandwich structure exhibit stable, reproducible, and reliable resistive switching characteristics. The ratio of resistance between high resistance states and low resistance states can reach similar to 10(5). Moreover, the low resistance is similar to 500 at a compliance current of 0.5 mA, which is favorable to reduce the power dissipation of the entire circuit. The switching-on mechanism has been discussed and the metallic conduction characteristic has also been verified. The fast response speed and the good retention properties further indicate that polycrystalline AIMO thin film is a potential candidate for the next generation nonvolatile memory.
MoreTranslated text
Key words
electrical resistivity, ion beam lithography, platinum, pulsed laser deposition, random-access storage, sandwich structures, scanning electron microscopy, silver, silver compounds, solid electrolytes, surface morphology, thin films, X-ray chemical analysis, X-ray diffraction
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined