The investigation of failure mechanism of n-GaN/Ti/Al/Ni/Au ohmic contact by novel TLM

Haijie J. Meng,Shiwei Feng,YueZong Zhang,Guangchen Zhang,Chunsheng Guo,Haitao Deng

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA（2009）

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摘要

Based on traditional transmission line method (TLM), an improved method was used to investigate the failure mechanism of n-GaNlTilAl/NilAu ohmic contact under high-current density (>10 sA/cm 2). A novel structure is proposed and fabricated. The degradation of the ohmic contact was studied by the novel structure. According to analyzing the energy spectrum of the sample before and after degradation, it is concluded that Aluminium diffusion is the main factor that destroyed the good ohmic contact. ©2009 IEEE.

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关键词

aluminium,transmission line theory,ohmic contacts,degradation,current density,gold,films,nickel,ohmic contact,power transmission lines,etching,titanium,failure analysis,transmission lines,transmission line,electrodes

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