A novel method for determing the lifetime of devices based on process-stress accelerated degradation test
Suzhou, Jiangsu(2009)
Abstract
A novel method, which enables rapid determination of lifetime for semiconductor devices, is presented based on progressive-stress accelerated degradation test. Through two steps of acceleration: firstly, using process-stress accelerated test to accelerate the parameter degradation; secondly, using the data of 1~5% degradation to extrapolate the data of 10~50% degradation, this method shortens the test time to dozens or several hundreds of hours. To demonstrate the application of the method, a kind of mature products, Si PNP BJT 3CG120, was tested.
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Key words
bipolar transistors,process-stress accelerated degradation test,pnp bjt,semiconductor devices,semiconductor device testing,si,data mining,reliability,temperature,degradation,voltage,stress
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