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单晶硅片化学机械抛光材料去除特性

DU Jia-xi,SU Jian-xiu,WAN Xiu-ying,NING Xin

Beijing Keji Daxue Xuebao/Journal of University of Science and Technology Beijing（2009）

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Abstract
根据化学机械抛光(CMP)过程中硅片表面材料的磨损行为,建立了硅片CMP时的材料去除率模型,设计了不同成分的抛光液并进行了材料去除率实验,得出了机械、化学及其交互作用所引起的材料去除率. 结果表明,磨粒的机械作用是化学机械抛光中的主要机械作用,磨粒的机械作用与抛光液的化学作用交互引起的材料去除率是主要的材料去除率.
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Key words
Chemical mechanical polishing,Material removal mechanism,Material removal rate,Silicon wafer,Wear behavior
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