Photoluminescence Properties Of Rare-Earth Nd,Ce Doped Si-Based Materials

The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by Nd and Ce by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to the dose of implantation and to the temperature of thermal annealing. The feature and appearance of the samples was surveyed with atomic force microscopy(AFM). The results show that the surface grain size and coarse degree for sample have influence on its light emission efficiency. The light emission efficiency is higher when the surface grain size is symmetrical and average coarse degree is little for samples. The Rutherford Backscattering Spectrum(RBS) at room temperature for the samples was measured,the relationship between of luminescence properties of samples and morphology in implanted layer is investigated. The photoluminescence mechanism for our samples is also discussed.