N-π Equivalent Circuit for Si CMOS on-Chip Inductor Modeling
Nanjing（2008）
Abstract
We carried out the modeling of silicon CMOS on-chip spiral inductors based on an n-ges4 equivalent circuit. Due to the distributed nature of the inductor, the n- (nges4) structure can be more precisely characterize the inductor behavior as compared to the conventional single-pi or double-pi models with an operating frequency beyond the GHz range. The parameter extraction with a characteristic-function approach for the equivalent circuit is achieved through the transformation of the ABCD-matrix.
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Key words
n-π equivalent circuit,semiconductor device models,inductor,parameter extraction,spiral inductors,cmos on-chip inductor modeling,equivalent circuit,equivalent circuits,inductors,silicon,semiconductor device modeling,scattering parameters,information science,spirals,frequency,chip,characteristic function
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