Influence of contact positioning on the performance of stress induced MOSFETs

Xiang Zhang, Wei Wu,Gang Du,Ruqi Han,Xiaoyan Liu

2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC（2008）

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摘要

In this paper, strain induced Si MOSFETs with multiple contact positioning strategies are simulated by ISE TCAD tool. The strain distribution of the MOSFETs with symmetric and asymmetric drain/source structure is investigated. The performance of the devices such as the Idsat and transfer characteristics is also simulated and compared. The results will help to model the characteristics of MOSFETs considering layout dependence. © 2008 IEEE.

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关键词

layout dependence,mosfets,stress,logic gates,strain,silicon

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