Fabrication Of High Quality Cdte(100)/Si(100) Crystal Films By Hot Wall Epitaxy

High-quality CdTe(100) thin film with mirror-like surface prepared on Si(100) substrate by hot wall epitaxy(HWE) without any pre-deoxidization treatment is reported in this paper. The surface and cross-sectional morphologies as well as the structural properties were investigated by SEM and XRD, respectively. SEM revealed that the surface was smooth and clear "layer-by-layer" growth terrace could be discovered, cross-sectional image confirmed that columnar growth with the same orientation had been achieved during the film growth. XRD proved that the CdTe (400) peak was very strong and no other CdTe peak but a weak Te(100) peak could be detected in 27.64 degrees(2 theta), EDS discovered that the percentage of Te atom is 51.53% and near chemical stoichiometry with Cd atom. 756arcsec FWHM value was obtained for a 12 mu m as-grown sample by high accuracy omega scanning. All results proved that HWE had the potential to fabricate single crystal CdTe thin film on silicon substrate.