Growth Of Yba2cu3o7-Delta And La0.67ca0.33mno3 Thin Films On Silicon-On-Insulator Substrates

By using the pulsed laser deposition technique, we have successfully prepared epitaxial YBa2CU3O7-delta (YBCO) and La0.67Ca0.33MnO3 (LCMO) thin films on yittria-stabilized zirconia (YSZ) buffered silicon-on-insulator (SOI) wafers. The zero-resistance temperature T-cO of YBCO is up to 88 K. However, scanning electron microscopy (SEM) demonstrates that microcracks of width 20-50 nm still appear in the YBCO films. The crack width and density increase with the thickness increasing of YBCO thin films. As a result, the critical current density J(c) is quite limited and the films show an aging effect. Nevertheless, comparison between the experimental and the theoretically estimated value of the crack spacing suggests that the stress is partially released for the adoption of SOI substrates. In contrast, the pseudocubic LCMO thin films grown on YSZ/SOI substrates are multi-oriented in plane, which results in a large extrinsic low field magnetoresistance (similar to 20%). (c) 2007 Elsevier B.V. All rights reserved.