Submicron Domain Inversion In Mg-Doped Linbo3 Using Backswitched Poling With Short Voltage Pulses

The authors describe a technique for fabricating submicron domain inversion structures in MgO:LiNbO3. The method is based on controlled backswitched poling with short voltage pulses. Using this method, short periodic structures consisting of submicron domain patterns have been achieved in Z-cut MgLN crystal. The structure is fully compatible with nonlinear optical integrated waveguide applications. High performance of the submicron domain inversion structure is also demonstrated by evaluating its potential as second harmonic generation. (c) 2007 American Institute of Physics.