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GaAs/AlAs DBR的GSMBE优化生长及表征

Zhengsheng Xie,Huizhen Wu,YanFeng Lao,Cheng Liu,Meng Cao

RARE METAL MATERIALS AND ENGINEERING（2007）

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Abstract
采用气态源分子束外延(GSMBE)技术优化生长了GaAs/AlAs分布布拉格反射镜(DBR)材料,并用X射线衍射(XRD)及反射光谱对其生长质量进行了表征.结果表明,采用5 s间断生长的GaAs/AlAs DBR材料质量和界面质量优于无间断生长,并且10对GaAs/AlAs DBR的质量优于30对,说明DBR对数越多,周期厚度波动越大,材料质量越差.优化生长得到的30对GaAs/AlAs DBR的反射率大于99%,中心波长为1316 nm,与理论设计结构的模拟结果基本一致,可用作1.3 μm垂直腔面发射激光器(VCSEL)直接键合的反射腔镜.
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Key words
DBR,GSMBE,XRD,reflectivity spectra
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