Crystallization of amorphous Si thin films by means of laser and thermal annealing from the viewpoint of energy

Amorphous Silicon (a-Si) films were prepared by pulsed laser ablation in vacuum chamber with base pressure of 2 x 10(-4) Pa, then the a-Si deposited films were annealed by laser in vacuum chamber under different laser fluence and by heat in the electric furnace under ambient of nitrogen gas with different temperature. The crystallization of a-Si films presented similar process and results. According to similar characteristics, we analyzed the results via energy in order to control the relationship between two ways of crystallization, which may be able to help us to comprehend the mechanism of crystallization and prepare uniform-sized and symmetrical Si nanoparticles by controlling the energy accurately. This method can be readily adapted for mass production of optoelectronic devices.