The Study of ZnO Photoconductive UV Detector
Shanghai（2007）
Abstract
A ZnO photoconductive UV detector was fabricated on ZnO film grown by MOCVD based on Al/Au interdigital electrode. Nonalloyed Al/Au metallization scheme formed good ohmic contact on n-type ZnO. The dark and photoilluminated currents increased linearly with bias voltage. The cutoff wavelength of the detector was 368nm, and it was also in response to the blue and green light. Electrical and photoresponsive changes of the ZnO UV detector due to RF sputter deposition of antireflection coating (AR) were also studied
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Key words
368 nm,mocvd,gold,uv,n-type zno,wide band gap semiconductors,zno film,photoilluminated currents,al-au,rf sputter deposition,ohmic contact,sputter deposition,dark currents,ar coating,zno,ohmic contacts,detector,photodetectors,ultraviolet detectors,ii-vi semiconductors,aluminium,metallisation,antireflection coatings,photoconducting devices,photoconductivity,al/au interdigital electrode,zinc compounds,zno photoconductive uv detector,photoresponse,antireflection coating,nonalloyed al/au metallization scheme
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