Low Power RF Section of a Passive Tag in 0.35/spl mu/m CMOS
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings（2006）
Abstract
A RF section of a long range passive tag in 0.35 mum CMOS process has been present. It contains a voltage rectifier and a voltage regulator, which convert the RF signal into a regulated DC voltage. A PWM demodulator to decode the data from modulator RF carriers and a FSK backscatter modulator are designed. A local oscillator with the output frequency of 6.6 MHz has been calibrated by the reader's emitting signals. The whole RF section working voltage is 2V to 3.3V, with current dissipation 13.4 muA at 3.3V. The chip area is 0.96mm2
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Key words
CMOS integrated circuits,frequency shift keying,low-power electronics,oscillators,pulse width modulation,radiofrequency identification,radiofrequency integrated circuits,rectifying circuits,voltage regulators,0.35 micron,13.4 muA,2 to 3.3 V,6.6 MHz,CMOS process,FSK backscatter modulator,PWM demodulator,low power RF section,passive tag,radiofrequency section,regulated DC voltage,voltage rectifier,voltage regulator,
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