Modeling of Scattering at High-k Dielectric/SiO2 Interface of Strained SiGe MOSFETs

Xue Feng Zhang,Jing-Ping Xu, Lai, P.T.,Zou, Xiao

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings（2006）

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摘要

A physical model describing the scattering behavior of holes in the channel of SiGe MOSFET due to interface roughness and remote charged defects of the high-k dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated by considering the above two scattering mechanisms. Simulated results are in good agreement with experimental data

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关键词

Ge-Si alloys,MOSFET,dielectric materials,hole mobility,scattering,semiconductor device models,silicon compounds,wave functions,Fang-Howard variational wave function,MOSFET,SiGe,SiO2,high-k dielectric interface,hole mobility,hole scattering,interface roughness,remote charged defects,

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