Epitaxial growth and characterization of 6H-SiC films on Si (111) substrates by LPCVD

6H-SiC films were grown on Si (111) substrates by LPCVD (low pressure chemical vapor deposition) with gas mixtures of SiH4, C3H8 and H2, 6H-SiC polytype of the films were confirmed by LTPL (low temperature photoluminescence). XRD pattern shows the film is of high crystalline quality. The result of SEM (scan electron microscope) image indicates the films consist of tabular SiC grains. TED (transmitted electron diffraction) pattern further shows that the films are of high quality. The growth mechanism for formation of 6H-SiC films on Si (111) substrates was briefly discussed.