Ni,Ti/4H-SiC肖特基势垒二极管
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics（2007）
Abstract
采用本实验室生长的4H-SiC外延片,分别用高真空电子束蒸Ni和Ti做肖特基接触金属,Ni合金作欧姆接触,SiO2绝缘环隔离减小高压电场集边效应等技术,制作出4H-SiC肖特基势垒二极管(SBD).该器件在室温下反向击穿电压大于600 V,对应的漏电流为2.00×10-6A.对实验结果分析显示,采用Ni和Ti作肖特基势垒的器件的理想因子分别为1.18和1.52,肖特基势垒高度为1.54 eV和1.00 eV.实验表明,该器件具有较好的正向整流特性.
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Key words
4H-SiC,Breakdown voltage,Epitaxy,Schottky barrier diode
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