The dielectric properties of Ba0.6Sr0.4Cr xTi1_xO3 thin films prepared by pulsed laser deposition

Ba0.6Sr0.4CrxTi1-xO 3 (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction analysis detected an increase in the lattice parameters, which could be due to the characteristics of the growth process. Dielectric properties and tunability of the BSCT films were measured. The dissipation factors of the films decreased with increasing Cr-concentration. The highest figure of merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive. © 2008 IEEE.