Oxygen content on the influence of the electrical and optical properties of ITO thin films made by DC magnetron sputtering

Using In/Sn alloy as target, samples were got with different oxygen content by changing the oxygen flux when making the ITO thin films, then annealed at different temperature of 400°C and 600°C under air ambience. The square resistances of the samples before and after annealing were gained by using the four-point probe measurement. Utilizing the scanning electron microscope to analyze the surface ingredients of the samples and the Perkinelmer Instruments LAMBDA 900 photometer to measure the transmittance of the samples, this paper got a conclusion: changing the oxygen flux during the preparation of ITO thin films to infect the oxygen content of samples can result in that the square resistance and transmittance of different samples with the increasing of the annealing temperature varied in a different law.