1060 nm wavelength high power diode array module

InGaAs/GaAsP strained-compensated single-quantum well structure with an emission wavelength of 1060 nm was grown. The laser bars with a stripe width of 200 μm and a filling factor of 50% was fabricated. The back HR coating is Al 2O 3 /5(HfO 2/SiO 2)/HfO 2 and the front AR coating is Al 2O 3. The module's CW output power reaches to 68.5 W at a current of 80 A. The threshold current is 10 A and the central wavelength is 1059 nm with a FWHM of 9 nm.