硫化过程中FeS2薄膜组织结构和电学性能的变化
Zhejiang Daxue Xuebao (Gongxue Ban)/Journal of Zhejiang University (Engineering Science)（2004）
Abstract
采用Fe膜热硫化法在673 K和773 K温度下形成了FeS2多晶薄膜.分析了不同硫化时间对晶体结构、化学成分、晶粒大小、电阻率和载流子浓度的影响.673 K下硫化超过20 h及773 K温度下硫化超过1 h,Fe膜生成FeS2比较充分.随硫化时间延长,673 K下硫化的薄膜晶粒直径基本保持在50 nm左右,但电阻率增大,载流子浓度下降.773 K下硫化的薄膜晶粒尺寸及电阻率均随硫化时间延长而明显增大,但载流子浓度变化不明显,通常低于1×1025m-3的水平.
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Key words
Carrier concentration,FeS2,Microstructure,Resistivity,Thin film
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